器件名称:
TIP127FP
功能描述:
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
文件大小:
29.78KB 共4页
简 介:
TIP122FP TIP127FP COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS s s s SGS-THOMSON PREFERRED SALESTYPES FULLY MOLDED ISOLATED PACKAGE 2000 V DC ISOLATION (U.L. COMPLIANT) DESCRIPTION The TIP122FP is a silicon epitaxial-base NPN power transistor in monolithic Darlington configuration Jedec TO-220FP fully molded isolated package, intented for use in power linear and switching applications. The complementary PNP type is TIP127FP. 3 1 2 TO-220FP INTERNAL SCHEMATIC DIAGRAM R1 Typ. = 5 K R2 Typ. = 150 ABSOLUTE MAXIMUM RATINGS Symbol Parameter NPN PNP V CBO V CEO V EBO IC I CM IB P t ot T stg Tj Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Current Total Dissipation at T case ≤ 25 C o T amb ≤ 25 C Storage Temperature Max. O perating Junction Temperature o Value T IP122FP T IP127FP 100 100 5 5 8 0.1 29 2 -65 to 150 150 Uni t V V V A A A W W o o C C * For PNP types voltage and current values are negative. April 1998 1/4 TIP122FP / TIP127FP THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 4.3 62.5 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CEO I CBO I EBO Parameter Collector Cut-off Current (IB = 0) Collector Cut-off Current (IB = 0) Emitter Cut-off Current (I C = 0) Test Cond ition s V CE = 50 V V CE = 100 V V EB = 5 V I C = 30 mA 100 Min. Typ . Max. ……
