器件名称:
TIP132G
功能描述:
Darlington Complementary Silicon Power Transistors
文件大小:
61.1KB 共4页
简 介:
TIP131, TIP132 (NPN), TIP137 (PNP) Preferred Devices Darlington Complementary Silicon Power Transistors Designed for generalpurpose amplifier and lowspeed switching applications. Features http://onsemi.com High DC Current Gain hFE = 2500 (Typ) @ IC = 4.0 Adc CollectorEmitter Sustaining Voltage @ 30 mAdc VCEO(sus) = 80 Vdc (Min) TIP131 = 100 Vdc (Min) TIP132, TIP137 Low CollectorEmitter Saturation Voltage VCE(sat) = 2.0 Vdc (Max) @ IC = 4.0 Adc = 3.0 Vdc (Max) @ IC = 6.0 Adc Monolithic Construction with BuiltIn BaseEmitter Shunt Resistors PbFree Packages are Available* DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 80100 VOLTS, 70 WATTS MARKING DIAGRAM 4 MAXIMUM RATINGS Rating Symbol VCEO VCB VEB IC IB TIP131 80 80 TIP132 TIP137 100 100 Unit Vdc Vdc Vdc Adc CollectorEmitter Voltage CollectorBase Voltage EmitterBase Voltage 5.0 8.0 12 70 Collector Current Continuous Peak Base Current 300 2.0 mAdc W W Total Power Dissipation @ TC = 25_C Total Power Dissipation @ TA = 25_C Operating and Storage Junction, Temperature Range PD PD TJ, Tstg – 65 to + 150 _C TO220AB CASE 221A STYLE 1 1 2 3 TIP13xG AYWW TIP13x x A Y WW G = Device Code = 1, 2, or 7 = Assembly Location = Year = Work Week = PbFree Package ORDERING INFORMATION Device TIP131 TIP131G TIP132 TIP132G TIP137 TIP137G Package TO220 TO220 (PbFree) TO220 TO220 (PbFree) TO220 TO220 (PbFree) Shipping 50 Units/Rail 50 Units/Rail 50 ……