器件名称:
TIP141F
功能描述:
SILICON PLANAR DARLINGTON POWER TRANSISTORS
文件大小:
60.02KB 共2页
简 介:
Transys Electronics L I M I T E D SILICON PLANAR DARLINGTON POWER TRANSISTORS TIP140F, 141F, 142F NPN TIP145F, 146F, 147F PNP TO- 3P Fully Isolated Plastic Package B C E For use in Power Linear and Switching Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Peak Current (repetitive) Base Current Total Power Dissipation @ Tc <25C Operating And Storage Junction Temperature Range THERMAL RESISTANCE From Junction to case SYMBOL VCBO VCEO VEB0 IC ICM IB PD Tj, Tstg TIP140F TIP145F 60 60 TIP141F TIP146F 80 80 5.0 10 20 0.5 60 - 65 to +150 TIP142F TIP147F 100 100 UNIT V V V A A A W C Rth (j-c) 1.0 C/W ELECTRICAL CHARACTERISTICS (Tc=25C unless specified otherwise) TEST CONDITION DESCRIPTION SYMBOL I V Collector Cutoff Current CBO CB =Rated VCBO, IE=0 ICEO VCE =1/2 rated VCEO, IB=0 Collector Cutoff Current IEBO VEB =5.0 V, IC=0 Emitter Cutoff Current *V IC =30mA, IB=0 Collector-Emitter Sustaining Voltage CEO (sus) TIP140F/145F TIP141F/146F TIP142F/147F *VCE (sat) IC =5A, IB=10mA Collector-Emitter Saturation Voltage IC =10A, IB =40mA *VBE (on) IC =10A, VCE =4 V Base-Emitter On Voltage *hFE IC =5A, VCE =4V DC Current Gain IC =10A, VCE =4 V SWITCHING TIME DESCRIPTION Turn on time Turn off time MIN TYP MAX 1.0 2.0 2.0 UNIT mA mA mA V V V V V V 60 80 100 2.0 3.0 3.0 1000 500 SYMBOL ton toff TEST CONDITION IC=10A, IB1=40mA, IB2= - 40mA, RL=3 MIN TYP 0.9 4.0 MAX UNIT s s *P……
