器件名称:
TIP145F
功能描述:
Monolithic Construction With Built In Base- Emitter Shun
文件大小:
62.18KB 共4页
简 介:
TIP145F/146F/147F TIP145F/146F/147F Monolithic Construction With Built In BaseEmitter Shunt Resistors High DC Current Gain : hFE = 1000 @ VCE = -4V, IC = -5A (Min.) Industrial Use Complement to TIP140F/141F/142F 1 TO-3PF 2.Collector 3.Emitter PNP Epitaxial Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Emitter Voltage : TIP145F : TIP146F : TIP147F Collector-Emitter Voltage : TIP145F : TIP146F : TIP147F Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current (DC) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value - 60 - 80 - 100 - 60 - 80 - 100 -5 - 10 - 15 - 0.5 60 150 - 65 ~ 150 Units V V V V V V V A A A W °C °C 1.Base Equivalent Circuit C B VCEO VEBO IC ICP IB PC TJ TSTG R1 R2 E R1 8k R 2 0.12 k Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO(sus) Parameter Collector-Emitter Sustaining Voltage : TIP145F : TIP146F : TIP147F Collector Cut-off Current : TIP145F : TIP146F : TIP147F ICBO Collector Cut-off Current : TIP145F : TIP146F : TIP147F IEBO hFE VCE(sat) VBE(sat) VBE(on) tD tR tSTG tf Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Delay Time Rise Time Storage Time Fall Time VCB = - 60V, IE = 0 VCB = - 80V, IE = 0 VCB = - 100V, IE = 0 VBE = - 5V, IC = 0 VCE = - 4V, IC = - 5A VCE = - 4V, IC = - 10A IC = - 5A, IB = - 10mA IC = - 10A, IB……
