器件名称:
TIP146T
功能描述:
Monolithic Construction With Built In Base-Emitter Shun
文件大小:
52.16KB 共4页
简 介:
TIP145T/146T/147T TIP145T/146T/147T Monolithic Construction With Built In BaseEmitter Shunt Resistors High DC Current Gain : hFE = 1000@ VCE = - 4V, IC = - 5A (Min.) Industrial Use Complement to TIP140T/141T/142T 1 TO-220 2.Collector 3.Emitter 1.Base PNP Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : TIP145T : TIP146T : TIP147T Value - 60 - 80 - 100 - 60 - 80 - 100 -5 - 10 - 15 - 0.5 80 150 - 65 ~ 150 Units V V V V V V V A A A W °C °C R1 R2 E Equivalent Circuit C B VCEO VEBO IC ICP IB PC TJ TSTG Collector-Emitter Voltage : TIP145T : TIP146T : TIP147T Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current (DC) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature R1 8k R 2 0.12 k Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO(sus) Parameter Collector-Emitter Sustaining Voltage : TIP145T : TIP146T : TIP147T Collector Cut-off Current : TIP145T : TIP146T : TIP147T ICBO Collector Cut-off Current : TIP145T : TIP146T : TIP147T IEBO hFE VCE(sat) VBE(sat) VBE(on) tD tR tSTG tF Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Delay Time Rise Time Storage Time Fall Time VCB = - 60V, IE = 0 VCB = - 80V, IE = 0 VCB = - 100V, IE = 0 VBE = - 5V, IC = 0 VCE = - 4V, IC = - 5A VCE = - 4V, IC = - 10A IC = - 5A, IB = - 10mA IC = - 10A,……
