器件名称:
TIP29_08
功能描述:
NPN Epitaxial Silicon Transistor
文件大小:
528.55KB 共5页
简 介:
TIP29/TIP29A/TIP29B/TIP29C — NPN Epitaxial Silicon Transistor July 2008 TIP29/TIP29A/TIP29B/TIP29C NPN Epitaxial Silicon Transistor Features Complementary to TIP30/TIP30A/TIP30B/TIP30C 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter : TIP29 : TIP29A : TIP29B : TIP29C Value 40 60 80 100 40 60 80 100 5 1 3 0.4 30 2 150 - 65 ~ 150 Units V V V V V V V V V A A A W W °C °C VCEO Collector-Emitter Voltage : TIP29 : TIP29A : TIP29B : TIP29C Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Collector Dissipation (Ta=25°C) VEBO IC ICP IB PC TJ TSTG Junction Temperature Storage Temperature 2008 Fairchild Semiconductor Corporation TIP29/TIP29A/TIP29B/TIP29C Rev. A www.fairchildsemi.com 1 TIP29/TIP29A/TIP29B/TIP29C — NPN Epitaxial Silicon Transistor Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO(sus) Parameter *Collector-Emitter Sustaining Voltage : TIP29 : TIP29A : TIP29B : TIP29C Collector Cut-off Current : TIP29/29A : TIP29B/29C Collector Cut-off Current : TIP29 : TIP29A : TIP29B : TIP29C IEBO hFE Emitter Cut-off Current *DC Current Gain VCE = 40V, VEB = 0 VCE = 60V, VEB = 0 VCE = 80V, VEB = 0 VCE = 100V, VEB = 0 VEB = 5V, IC = 0 VCE = 4V, IC = 0.2A VCE = 4V, IC = 1A IC = 1A, IB = 125mA VCE = 4V, IC = 1A VCE = 10V, IC = 200mA 3.0 40 15 200 200 200 200 1.0 μA μA μA μA mA Test Condition Min. Max. Units ……
