器件名称:
TIP29B
功能描述:
POWER TRANSISTORS COMPLEMENTARY SILICON
文件大小:
137.72KB 共4页
简 介:
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by TIP29B/D v v . . . designed for use in general purpose amplifier and switching applications. Compact TO–220 AB package. MAXIMUM RATINGS Rating Symbol VCEO VCB VEB IC IB PD PD E TIP29B TIP30B 80 80 TIP29C TIP30C 100 100 Unit Vdc Vdc Vdc Adc Adc Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage 5.0 1.0 3.0 0.4 Collector Current — Continuous Peak Base Current Complementary Silicon Plastic Power Transistors TIP29B TIP29C PNP TIP30B TIP30C NPN 1 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 80 – 100 VOLTS 30 WATTS Total Power Dissipation @ TC = 25_C Derate above 25_C Total Power Dissipation @ TA = 25_C Derate above 25_C Unclamped Inductive Load Energy (See Note 3) Operating and Storage Junction Temperature Range 30 0.24 Watts W/_C Watts W/_C mJ 2.0 0.016 32 TJ, Tstg – 65 to + 150 _C THERMAL CHARACTERISTICS Characteristic Symbol RθJA Max Unit Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case 62.5 _C/W _C/W RθJC 4.167 CASE 221A–06 TO–220AB ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic OFF CHARACTERISTICS Symbol Min 80 100 — — — — Max — — Unit Vdc Collector–Emitter Sustaining Voltage (1) (IC = 30 mAdc, IB = 0) Collector ……
