器件名称:
TIP3055
功能描述:
POWER TRANSISTORS COMPLEMENTARY SILICON
文件大小:
101.21KB 共4页
简 介:
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by TIP3055/D Complementary Silicon Power Transistors . . . designed for general–purpose switching and amplifier applications. DC Current Gain — hFE = 20 – 70 @ IC = 4.0 Adc Collector–Emitter Saturation Voltage — VCE(sat) = 1.1 Vdc (Max) @ IC = 4.0 Adc Excellent Safe Operating Area MAXIMUM RATINGS TIP3055 PNP TIP2955 15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 90 WATTS NPN Rating Symbol VCEO VCER VCB VEB IC IB Value 60 70 Unit Vdc Vdc Vdc Vdc Adc Adc Collector–Emitter Voltage Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage 100 7.0 15 Collector Current — Continuous Base Current 7.0 Total Power Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction Temperature Range PD 90 0.72 Watts W/_C TJ, Tstg – 65 to + 150 _C THERMAL CHARACTERISTICS Characteristic CASE 340D–02 Symbol RθJC RθJA Max Unit Thermal Resistance, Junction to Case 1.39 35.7 _C/W _C/W Thermal Resistance, Junction to Ambient 1000 hFE , DC CURRENT GAIN VCE = 4.0 V TJ = 25°C 100 TIP3055 TIP2955 10 0.1 0.2 0.3 2.0 3.0 0.5 0.7 1.0 IC, COLLECTOR CURRENT (AMP) 5.0 7.0 10 Figure 1. DC Current Gain REV 1 Motorola, Inc. 1996 Motorola Bipolar Power Transistor Device Data 1 v TIP3……
