器件名称:
TIP31_07
功能描述:
General Purpose Silicon Power Transistors
文件大小:
106.84KB 共2页
简 介:
TIP31 ... TIP31C TIP31 ... TIP31C NPN Version 2006-07-12 10±0.2 3 4 3.8 Type Typ General Purpose Silicon Power Transistors Silizium Leistungs-Transistoren für universellen Einsatz Max. power dissipation with cooling Max. Verlustleistung mit Kühlung Collector current Kollektorstrom Plastic case Kunststoffgehuse Weight approx. Gewicht ca. Plastic material has UL classification 94V-0 Gehusematerial UL94V-0 klassifiziert Standard packaging in tubes Standard Lieferform in Stangen NPN 40 W 3A TO-220AB 2.2 g 15.7 1 2 3 13.2 1.5 0.9 2.54 Dimensions - Mae [mm] 1=B 2/4 = C 3=E Maximum ratings (TA = 25°C) TIP31 Collector-Emitter-voltage Collector-Emitter-voltage Emitter-Base-voltage Power dissipation – Verlustleistung without cooling – ohne Kühlung with cooling – mit Kühlung Collector current – Kollektorstrom (dc) Peak Collector current – Kollektor-Spitzenstrom Base current – Basisstrom (dc) Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur TA = 25°C TC = 25°C Ptot Ptot IC ICM IB Tj TS B open E open C open VCEO VCES VEBO 40 V 40 V 60 V 60 V 3.4 Grenzwerte (TA = 25°C) TIP31A TIP31B 80 V 80 V 5V 2 W 1) 40 W 3A 5A 1A -55...+150°C -55…+150°C TIP31C 100 V 100 V Characteristics (Tj = 25°C) Min. DC current gain – Kollektor-Basis-Stromverhltnis ) 2 Kennwerte (Tj = 25°C) Typ. – – – – Max. – 50 1.2 V 1.8 V VCE = 4 V, IC = 1 A VCE = 4 V, IC = 3 A IC = 3 A, IB = 375 mA Base-Emitter voltage – Basis-Emitter-Spannung ) 2 hFE hFE VCEsat VBE 25 10 – –……
