器件名称:
TIP32B
功能描述:
POWER TRANSISTORS COMPLEMENTARY SILICON
文件大小:
196.67KB 共6页
简 介:
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by TIP31A/D Complementary Silicon Plastic Power Transistors . . . designed for use in general purpose amplifier and switching applications. Collector–Emitter Saturation Voltage — VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc Collector–Emitter Sustaining Voltage — VCEO(sus) = 60 Vdc (Min) — TIP31A, TIP32A VCEO(sus) = 80 Vdc (Min) — TIP31B, TIP32B VCEO(sus) = 100 Vdc (Min) — TIP31C, TIP32C High Current Gain — Bandwidth Product fT = 3.0 MHz (Min) @ IC = 500 mAdc Compact TO–220 AB Package *MAXIMUM RATINGS Rating Symbol VCEO VCB VEB IC IB TIP31A TIP32A 60 60 TIP318 TIP32B 80 80 TIP31C TIP32C 100 100 Unit Vdc Vdc Vdc Adc Adc Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage 5.0 3.0 5.0 1.0 Collector Current — Continuous Peak Base Current Total Power Dissipation @ TC = 25_C Derate above 25_C Total Power Dissipation @ TA = 25_C Derate above 25_C Unclamped Inductive Load Energy (1) PD 40 0.32 Watts W/_C Watts W/_C mJ PD 2.0 0.016 32 E Operating and Storage Junction Temperature Range TJ, Tstg – 65 to + 150 TIP31A TIP31B* TIP31C* PNP TIP32A TIP32B* TIP32C* *Motorola Preferred Device NPN 3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 – 80 – 100 VOLTS 40 WATTS CASE 221A–06 TO–220AB _C THERMAL CHARACTERISTICS Characteristic Symbol RθJA Max Unit Thermal Resistance, Junction to Ambi……
