器件名称:
TIP33B
功能描述:
COMPLEMENTARY SILICON POWER TRANSISTORS
文件大小:
105.51KB 共4页
简 介:
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by TIP33B/D Complementary Silicon High-Power Transistors . . . for general–purpose power amplifier and switching applications. TIP33B* TIP33C PNP TIP34B* TIP34C *Motorola Preferred Device NPN v MAXIMUM RATINGS Rating Symbol VCEO VCB VEB IC IB TIP33B TIP34B 80 V 80 V TIP33C TIP34C 100 V 100 V Unit Vdc Vdc Vdc Adc Adc Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage 5.0 10 15 Collector Current — Continuous Peak (1) Base Current — Continuous Total Power Dissipation @ TC = 25_C Derate above 25_C 3.0 PD 80 0.64 Watts W/_C Operating and Storage Junction Temperature Range TJ, Tstg – 65 to + 150 10 A Collector Current Low Leakage Current — ICEO = 0.7 mA @ 60 V Excellent dc Gain — hFE = 40 Typ @ 3.0 A High Current Gain Bandwidth Product — hfe = 3.0 min @ IC = 0.5 A, f = 1.0 MHz 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 100 VOLTS 80 WATTS _C THERMAL CHARACTERISTICS Characteristic CASE 340D–01 TO–218AC Symbol RθJC RθJA Max Unit Thermal Resistance, Junction to Case 1.56 35.7 _C/W _C/W Junction–To–Free–Air Thermal Resistance (1) Pulse Test: Pulse Width = 10 ms, Duty Cycle 10%. 500 200 hFE , DC CURRENT GAIN 100 50 20 10 5.0 0.1 1.0 IC, COLLECTOR CURRENT (A) 10 VCE = 4.0 V TJ = 25°C NPN PNP Figure 1. DC Current Gain Preferred devices are Motorola recommended choices for future use and……
