器件名称:
TIP34C
功能描述:
EPITAXIAL PLANAR PNP TRANSISTOR (HIGH POWER AMPLIFIER)
文件大小:
73.3KB 共2页
简 介:
SEMICONDUCTOR TECHNICAL DATA HIGH POWER AMPLIFIER APPLICATION. A Q TIP34C EPITAXIAL PLANAR PNP TRANSISTOR B K FEATURES Complementary to TIP33C. Recommended for 45W50W Audio Frequency Amplifier Output Stage. D F E I C MAXIMUM RATING (Ta=25) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25) Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg RATING -100 -100 -6 -10 -3 80 150 -55150 UNIT V V V A A W d P P T M 1 2 3 DIM A B C D d E F G H I J K L M P Q T MILLIMETERS 15.9 MAX 4.8 MAX _ 0.3 20.0 + _ 0.3 2.0 + 1.0+0.3/-0.25 2.0 1.0 3.3 MAX 9.0 4.5 2.0 1.8 MAX _ 0.5 20.5 + 2.8 _ 0.2 5.45 + _ 0.2 Φ3.2 + 0.6+0.3/-0.1 1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER ELECTRICAL CHARACTERISTICS (Ta=25) CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Note : hFE Classification R:55~110, O:80~160 SYMBOL ICBO IEBO V(BR)CEO hFE (Note) VCE(sat) fT Cob TEST CONDITION VCB=-100V, IE=0 VEB=-6V, IC=0 IC=-25mA, IB=0 VCE=-4V, IC=-2A IC=-4A, IB=-0.4A VCE=-12V, IC=-0.5A VCB=-10V, IE=0, f=1MHz MIN. -100 55 TYP. 20 150 MAX. -10 -10 160 -1.0 V MHz pF UNIT A A V 2001. 1. 10 Revision No : 1 L G J H TO-3P(N) 1/2 TIP34C VCE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 1 0.5 0.3 TRANS……
