器件名称: TIP35CW
功能描述: Complementary Silicon High Power Transistors
文件大小: 104.37KB 共7页
简 介:TIP35CW TIP36CW
Complementary Silicon High Power Transistors
Features
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STMicroelectronics PREFERRED SALESTYPES
Description
The device is a silicon Epitaxial-Base NPN transistor mounted in TO-247 plastic package. It is intentend for use in power amplifier and switching applications. The complementary PNP type is TIP36CW. TO-247
3 2 1
Internal Schematic Diagram
Order Codes
Part Number TIP35CW TIP36CW Marking TIP35C W TIP36C W Package TO-247 TO-247 Packing Tube Tube
December 2005
rev.2 1/7
www.st.com 7
1 Absolute Maximum Ratings
TIP35CW / TIP36CW
1
Table 1.
Symbol
Absolute Maximum Ratings
Absolute Maximum Rating
Parameter NPN PNP VCBO VCEO VEBO IC ICM IB Ptot Tstg TJ Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp < 5ms) Base Current Total Dissipation at Tc = Storage Temperature Max. Operating Junction Temperature
For PNP types voltage and current values are negative.
Value TIP35CW TIP36CW 100 100 5 25 50 5
Unit
V V V A A A W
oC oC
25oC
125 -65 to 150 150
Note:
Table 2.
Symbol Rthj-case
Thermal Data
Parameter Thermal Resistance Junction-Case__________________Max Value 1 Unit
oC/W
2/7
TIP35CW / TIP36CW
2 Electrical Characteristics
2
Table 3.
Symbol ICEO IEBO ICES
Electrical Characteristics
Electrical Characteristics (Tcase = 25oC; unless otherwise specified)
Parameter Collector Cut-off Current (IB = 0) Emitter Cut-off Current (IC = 0) Collector Cut-off Current ……