器件名称:
TIP36CW
功能描述:
Complementary Silicon High Power Transistors
文件大小:
104.37KB 共7页
简 介:
TIP35CW TIP36CW Complementary Silicon High Power Transistors Features ■ STMicroelectronics PREFERRED SALESTYPES Description The device is a silicon Epitaxial-Base NPN transistor mounted in TO-247 plastic package. It is intentend for use in power amplifier and switching applications. The complementary PNP type is TIP36CW. TO-247 3 2 1 Internal Schematic Diagram Order Codes Part Number TIP35CW TIP36CW Marking TIP35C W TIP36C W Package TO-247 TO-247 Packing Tube Tube December 2005 rev.2 1/7 www.st.com 7 1 Absolute Maximum Ratings TIP35CW / TIP36CW 1 Table 1. Symbol Absolute Maximum Ratings Absolute Maximum Rating Parameter NPN PNP VCBO VCEO VEBO IC ICM IB Ptot Tstg TJ Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp < 5ms) Base Current Total Dissipation at Tc = Storage Temperature Max. Operating Junction Temperature For PNP types voltage and current values are negative. Value TIP35CW TIP36CW 100 100 5 25 50 5 Unit V V V A A A W oC oC 25oC 125 -65 to 150 150 Note: Table 2. Symbol Rthj-case Thermal Data Parameter Thermal Resistance Junction-Case__________________Max Value 1 Unit oC/W 2/7 TIP35CW / TIP36CW 2 Electrical Characteristics 2 Table 3. Symbol ICEO IEBO ICES Electrical Characteristics Electrical Characteristics (Tcase = 25oC; unless otherwise specified) Parameter Collector Cut-off Current (IB = 0) Emitter Cut-off Current (IC = 0) Collector Cut-off Current ……
