器件名称:
TIP42CF
功能描述:
EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE)
文件大小:
34.31KB 共2页
简 介:
SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. A TIP42CF EPITAXIAL PLANAR PNP TRANSISTOR C FEATURES Complementary to TIP41CF. U E S MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage DC Collector Current Pulse Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range Ta=25 Tc=25 ) SYMBOL VCBO VCEO VEBO IC ICP IB PC Tj Tstg RATING -100 -100 -5 -6 A -10 O L L M T UNIT V D D V V T N N T -2 2 25 150 -55 150 A W W 1 2 Q 3 DIM A B C D E F G H R J K L M V N O P Q R H S T U V MILLIMETERS 10.30 MAX 15.30 MAX 2.700.30 0.85 MAX Φ3.200.20 3.000.30 12.30 MAX 0.75 MAX 13.600.50 3.90 MAX 1.20 1.30 2.54 4.500.20 6.80 2.600.20 10 25 5 0.5 2.600.15 F G J 1. BASE K B TO-220IS ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Emitter Sustaining Voltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Transition Frequency ) TEST CONDITION IC=-30mA, IB=0 VCE=-60V, IB=0 VCE=-100V, VEB=0 VEB=-5V, IC=0 VCE=-4V, IC=-0.3A VCE=-4V, IC=-3A IC=-6A, IB=-600mA VCE=-4V, IC=-6A VCE=-10V, IC=-500mA MIN. -100 30 15 3.0 TYP. MAX. -0.7 -400 -1 75 -1.5 -2.0 V V MHz UNIT V mA A mA SYMBOL VCEO(SUS) ICEO ICES IEBO hFE VCE(sat) VBE(on) fT 2002. 6. 25 Revision No : 0 P 2. COLLECTOR 3. EMITTER 1/2 TIP42CF h FE - I C 1k DC CURRENT GAIN h FE VCE =-4V VCE(sat) ,V BE(sat) - I C -……
