器件名称:
TIP48
功能描述:
POWER TRANSISTORS NPN SILICON
文件大小:
199.96KB 共6页
简 介:
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by TIP47/D High Voltage NPN Silicon Power Transistors 250 V to 400 V (Min) — VCEO(sus) 1 A Rated Collector Current Popular TO–220 Plastic Package MAXIMUM RATINGS Rating Symbol VCEO VCB VEB IC IB TIP47 250 350 TIP48 300 400 TIP49 350 450 TIP50 400 500 Unit Vdc Vdc Vdc Adc Adc Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage 5.0 1.0 2.0 0.6 Collector Current — Continuous Peak Base Current Total Power Dissipation @ TC = 25_C Derate above 25_C Total Power Dissipation @ TA = 25_C Derate above 25_C PD 40 0.32 Watts W/_C Watts W/_C mJ PD 2.0 0.016 20 Unclamped Inducting Load Energy (See Figure 8) E Operating and Storage Junction Temperature Range TJ, Tstg – 65 to + 150 . . . designed for line operated audio output amplifier, Switchmode power supply drivers and other switching applications. TIP47 * TIP49 * TIP48 * TIP50 * *Motorola Preferred Device 1.0 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 – 400 VOLTS 40 WATTS CASE 221A–06 TO–220AB _C THERMAL CHARACTERISTICS Characteristic Symbol RθJC RθJA Max Unit Thermal Resistance, Junction to Case 3.125 62.5 _C/W _C/W Thermal Resistance, Junction to Ambient TA 4 TC 40 PD, POWER DISSIPATION (WATTS) 3 30 TC 2 20 1 10 TA 0 0 0 20 40 60 100 120 80 TC, CASE TEMPERATURE (°C) 140 160 Figure 1. Power Deratin……
