器件名称:
TIPL770
功能描述:
NPN SILICON POWER TRANSISTOR
文件大小:
149.13KB 共7页
简 介:
TIPL770 NPN SILICON POWER TRANSISTOR Copyright 1997, Power Innovations Limited, UK MARCH 1984 - REVISED MARCH 1997 q q q Rugged Triple-Diffused Planar Construction 2.5 A Continuous Collector Current Operating Characteristics Fully Guaranteed at 100°C 850 Volt Blocking Capability 50 W at 25°C Case Temperature TO-220 PACKAGE (TOP VIEW) B C E 1 2 3 q q Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING Collector-base voltage (IE = 0) Collector-emitter voltage (V BE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Continuous device dissipation at (or below) 25°C case temperature Operating junction temperature range Storage temperature range NOTE 1: This value applies for tp ≤ 10 ms, duty cycle ≤ 2%. SYMBOL VCBO VCES VCEO V EBO IC ICM Ptot Tj Tstg VALUE 850 850 400 10 2.5 8 50 -65 to +150 -65 to +150 UNIT V V V V A A W °C °C PRODUCT INFORMATION Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. 1 TIPL770 NPN SILICON POWER TRANSISTOR MARCH 1984 - REVISED MARCH 1997 electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER V CEO(sus) ICES ICEO IEBO hFE Collector-emitter sustaining voltage Collecto……
