器件名称:
SM6G45A
功能描述:
TOSHIBA BIDIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
文件大小:
232.25KB 共5页
简 介:
SM6G45,SM6J45,SM6G45A,SM6J45A TOSHIBA BIDIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM6G45,SM6J45,SM6G45A,SM6J45A AC POWER CONTROL APPLICATIONS l Repetitive Peak OffState Voltage : VDRM = 400, 600V l R.M.S ONState Current l High Commutating (dv / dt) : IT (RMS) = 6A Unit: mm MAXIMUM RATINGS CHARACTERISTIC SM6G45 SM6G45A SM6J45 SM6J45A SYMBOL RATING 400 VDRM 600 IT (RMS) ITSM I t di / dt PGM PG (AV) VGM IGM Tj Tstg 2 UNIT Repetitive Peak Off State Voltage V R.M.S OnState Current (Full Sine Waveform Tc = 104°C) Peak One Cycle Surge OnState Current (NonRepetitive) I t Limit Value Critical Rate of Rise of OnState Current Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Voltage Peak Gate Current Junction Temperature Storage Temperature Range 2 6 60 (50Hz) 66 (60Hz) 18 50 5 0.5 10 2 40~125 40~125 A A A s A / s W W V A °C °C 2 JEDEC JEITA TOSHIBA Weight: 2.0g TO220AB ― 1310G1A 1 2001-07-13 SM6G45,SM6J45,SM6G45A,SM6J45A ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Repetitive Peak OffState Current I SM6G45 SM6J45 Gate Trigger Voltage SM6G45A SM6J45A II III IV I II III IV I SM6G45 SM6J45 Gate Trigger Current SM6G45A SM6J45A II III IV I II III IV Peak OnState Voltage Gate NonTrigger Voltage Holding Current Thermal Resistance Critical Rate of Rise of Off State Voltage at Commutation SM6G45 SM6J45 SM6G45A SM6J45A VTM VGD IH Rth (jc) ITM = 9A VD = Rated, Tc = 125°C VD = 12V, ITM = 1A Junction to Case, AC VDRM = 400V, (di / dt) c = 3.3A / ms T……
