器件名称:
SM8G45
功能描述:
AC POWER CONTROL APPLICATIONS
文件大小:
320.79KB 共5页
简 介:
SM8G45, SM8J45, SM8G45A, SM8J45A TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM8G45, SM8J45, SM8G45A, SM8J45A AC POWER CONTROL APPLICATIONS Repetitive Peak OffState Voltage: VDRM = 400V, 600V R.M.S OnState Current: IT (RMS) = 8A High Commutating (dv / dt) Unit: mm MAXIMUM RATINGS CHARACTERISTIC SM8G45 SM8G45A SM8J45 SM8J45A SYMBOL RATING 400 VDRM 600 IT (RMS) ITSM I t di / dt PGM PG (AV) VGM IGM Tj Tstg 2 UNIT Repetitive Peak Off State Voltage V R.M.S OnState Current (Full Sine Waveform Tc = 105°C) Peak One Cycle Surge OnState Current (NonRepetitive) I t Limit Value Critical Rate of Rise of OnState Current Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Voltage Peak Gate Current Junction Temperature Storage Temperature Range 2 8 80 (50Hz) 88 (60Hz) 32 50 5 0.5 10 2 40~125 40~125 A A A s A / s W W V A °C °C 2 JEDEC JEITA TOSHIBA TO-220AB ― 13-10G1A Weight: 2.0 g (typ.) 1 2004-07-06 SM8G45, SM8J45, SM8G45A, SM8J45A ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Repetitive Peak OffState Current I SM8G45 SM8J45 Gate Trigger Voltage SM8G45A SM8J45A II III IV I II III IV I SM8G45 SM8J45 Gate Trigger Current SM8G45A SM8J45A II III IV I II III IV Peak OnState Voltage Gate NonTrigger Voltage Holding Current Thermal Resistance Critical Rate of Rise of Off State Voltage at Commutation SM8G45 SM8J45 SM8G45A SM8J45A VTM VGD IH Rth (jc) ITM = 12A VD = Rated, Tc = 125°C VD = 12V, ITM = 1A Junction to Case, AC VDRM = 400V, (di / dt) ……