器件名称:
TP3006
功能描述:
RF POWER TRANSISTOR NPN SILICON
文件大小:
125.29KB 共6页
简 介:
MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by TP3006/D NPN Silicon RF Power Transistor The TP3006 is designed for cellular radio base station amplifiers up to 960 MHz. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. The TP3006 also features input and output matching networks and high impedances. It can easily operate in a full 870– 960 MHz bandwidth in a simple circuit. Class AB Operation Specified 26 Volts, 960 MHz Characteristics Output Power — 5 Watts Gain — 9 dB min Efficiency — 45% min Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. TP3006 5 W, 870 – 960 MHz RF POWER TRANSISTOR NPN SILICON MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector–Current — Continuous Storage Temperature Range Operating Junction Temperature Total Device Dissipation @ TC = 25°C Derate above 25°C Symbol VCER VCBO VEBO IC Tstg TJ PD Value 45 55 3.5 2 – 40 to +100 200 25 0.14 Unit Vdc Vdc Vdc Adc °C °C Watts W/°C CASE 319–07, STYLE 2 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (1) Symbol RθJC Max 7 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 15 mA, RBE = 75 ) Emitter–Base Breakdown Voltage (IE = 4 mAdc) Collector–Base B……
