器件名称:
TP3022
功能描述:
NPN SILICON UHF POWER TRANSISTOR
文件大小:
51.19KB 共2页
简 介:
MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by TP3022B/D UHF Power Transistor The TP3022B is designed for common–emitter operation in the 900 MHz mobile radio band. Use of gold metallization and silicon diffused ballast resistors results in a medium power output/driver transistor with state–of–the– art ruggedness and reliability. Specified 26 Volts, 960 MHz Characteristics: Output Power = 15 Watts Minimum Gain = 8.5 dB IQ = 50 mA Class AB Operation TP3022B 15 W, 960 MHz NPN SILICON UHF POWER TRANSISTOR MAXIMUM RATINGS Rating Total Device Dissipation @ TC = 25°C Derate above 25°C Operating Junction Temperature Storage Temperature Range Symbol PD TJ Tstg Value 29 0.167 200 – 65 to +150 Unit Vdc °C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (1) Symbol RθJC Max 6.0 Unit °C/W CASE 319–07, STYLE 2 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS (1) Collector–Emitter Breakdown Voltage (IC = 10 mA, RBE = 75 Ohms) Collector–Emitter Leakage (VCE = 26 V, RBE = 75 Ohms) Emitter–Base Breakdown Voltage (IC = 5.0 mAdc) Emitter–Base Leakage (VBE = 2.5 V) V(BR)CER ICER V(BR)EBO IEBO 40 — 3.5 — — — — — — 5.0 — 1.0 Vdc mA Vdc mA ON CHARACTERISTICS DC Current Gain (IC = 500 mA, VCE = 10 V) hFE 15 — 100 — DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 24 V, IE = 0, f = 1.0 MHz) Cob — 17 25 pF FUNCTIONAL TESTS Common–Emitter Amplifier Power Gain (V……
