器件名称:
TP3032
功能描述:
RF POWER TRANSISTOR NPN SILICON
文件大小:
117.83KB 共4页
简 介:
MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by TP3032/D NPN Silicon RF Power Transistor The TP3032 is designed for 26 volts, common emitter, 960 MHz base station amplifiers, for use in analog and digital systems. Specified 26 Volts, 960 MHz Characteristics Output Power — 21 Watts Gain — 7.5 dB min Silicon Nitride Passivated Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration Class AB Operation Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. TP3032 21 W, 960 MHz RF POWER TRANSISTOR NPN SILICON MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector–Current — Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VCER VCBO VEBO IC PD Tstg TJ Value 40 48 3.5 4 52.5 0.3 – 65 to +150 200 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C CASE 319–07, STYLE 2 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (1) Symbol RθJC Max 3.3 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 30 mA, RBE = 75 ) Emitter–Base Breakdown Voltage (IE = 5 mAdc) Collector–Base Breakdown Voltage (IC = 30 mAdc) Collector–Emitter Leakage (VCE = 26 V, RBE = 75 ) V(BR)CER V(BR)EBO V(BR)CBO ICER 40 3.5 48 — — — — — — — — 8 Vdc Vdc ……
