器件名称:
SPI07N60C3
功能描述:
Cool MOS
文件大小:
374.19KB 共14页
简 介:
SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS Power Transistor Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated High peak current capability Improved transconductance P-TO220-3-31 1 2 3 VDS @ Tjmax RDS(on) ID P-TO262-3-1 P-TO263-3-2 650 0.6 7.3 V A P-TO220-3-31 P-TO220-3-1 2 1 P-TO220-3-1 23 P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute) Type SPP07N60C3 SPB07N60C3 SPI07N60C3 SPA07N60C3 Maximum Ratings Parameter Package P-TO220-3-1 P-TO263-3-2 P-TO262-3-1 Ordering Code Q67040-S4400 Q67040-S4394 Q67040-S4424 Marking 07N60C3 07N60C3 07N60C3 07N60C3 P-TO220-3-31 Q67040-S4409 Symbol ID Value SPP_B_I SPA Unit Continuous drain current TC = 25 °C TC = 100 °C A 7.3 4.6 7.31) 4.61) 21.9 230 0.5 7.3 ±20 ±30 Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID=5.5A, VDD =50V ID puls EAS EAR IAR VGS VGS Ptot 21.9 230 0.5 7.3 ±20 ±30 A mJ Avalanche energy, repetitive tAR limited by Tjmax2) ID=7.3A, VDD =50V Avalanche current, repetitive tAR limited by Tjmax Gate source voltage static A V W Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C 83 32 Operating and storage temperature T j , Tstg -55...+150 °C Rev. 2.1 Page 1 2004-04-07 SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 Maximum Ratings Parameter Symbol Value Unit Drain Source voltage slope V DS = 480 V, ID = 7.3 A, Tj = 125 °C dv/dt 50 V/ns Thermal Characteristics P……
