器件名称:
SPI07N65C3
功能描述:
Cool MOS
文件大小:
299.15KB 共14页
简 介:
SPP07N65C3, SPI07N65C3 SPA07N65C3 Cool MOS Power Transistor Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated High peak current capability Improved transconductance P-TO220-3-31 1 2 3 VDS @ Tjmax RDS(on) ID P-TO220-3-31 P-TO262-3-1 730 0.6 7.3 V A P-TO220-3-1 2 1 P-TO220-3-1 23 P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute) Type SPP07N65C3 SPI07N65C3 SPA07N65C3 Package P-TO220-3-1 P-TO262-3-1 Ordering Code Q67040-S4624 Q67040-S4623 Marking 07N65C3 07N65C3 07N65C3 P-TO220-3-31 Q67040-S4622 Maximum Ratings Parameter Symbol Value SPP_I SPA Unit Continuous drain current TC = 25 °C TC = 100 °C ID 7.3 4.6 ID puls EAS EAR A 7.31) 4.61) 21.9 230 0.5 2.5 ±20 ±30 32 W A V A mJ Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID=1.5A, VDD =50V 21.9 230 0.5 2.5 ±20 ±30 83 Avalanche energy, repetitive tAR limited by Tjmax2) ID=2.5A, VDD =50V Avalanche current, repetitive tAR limited by Tjmax Gate source voltage IAR VGS VGS Ptot Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C Operating and storage temperature T j , Tstg -55...+150 °C Rev. 1.0 Page 1 2004-04-07 SPP07N65C3, SPI07N65C3 SPA07N65C3 Maximum Ratings Parameter Symbol Value Unit Drain Source voltage slope V DS = 480 V, ID = 7.3 A, Tj = 125 °C dv/dt 50 V/ns Thermal Characteristics Parameter Symbol min. RthJC Values typ. max. Unit Thermal resistance, junction - case Thermal r……
