器件名称:
SPI08N50C3
功能描述:
Cool MOS
文件大小:
265.73KB 共13页
简 介:
Final data SPP08N50C3, SPI08N50C3 SPA08N50C3 VDS @ Tjmax RDS(on) ID 560 0.6 7.6 V A Cool MOS Power Transistor Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductance P-TO220-3-31 1 2 3 P-TO220-3-31 P-TO262-3-1 P-TO220-3-1 P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute) Type SPP08N50C3 SPI08N50C3 SPA08N50C3 Package P-TO220-3-1 P-TO262-3-1 Ordering Code Q67040-S4567 Q67040-S4568 Marking 08N50C3 08N50C3 08N50C3 P-TO220-3-31 Q67040-S4576 Maximum Ratings Parameter Symbol ID Value SPP_I SPA Unit Continuous drain current TC = 25 °C TC = 100 °C A 7.6 4.6 7.61) 4.61) 22.8 230 0.5 7.6 ±20 ±30 Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID=5.5A, VDD=50V ID puls EAS EAR IAR VGS VGS Ptot 22.8 230 0.5 7.6 ±20 ±30 A mJ Avalanche energy, repetitive tAR limited by Tjmax2) ID=7.6A, VDD=50V Avalanche current, repetitive tAR limited by Tjmax Gate source voltage A V W Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C 83 32 Operating and storage temperature T j , Tstg -55...+150 °C Page 1 2003-06-27 Final data Maximum Ratings Parameter SPP08N50C3, SPI08N50C3 SPA08N50C3 Symbol Value Unit Drain Source voltage slope VDS = 400 V, ID = 7.6 A, Tj = 125 °C dv/dt 50 V/ns Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - case, FullPAK Therm……
