器件名称:
SPI100N03S2-03
功能描述:
OptiMOS Power-Transistor
文件大小:
416.42KB 共8页
简 介:
SPI100N03S2-03 SPP100N03S2-03,SPB100N03S2-03 OptiMOS Power-Transistor Feature N-Channel Product Summary VDS RDS(on) max. SMD version ID P- TO263 -3-2 30 3 100 P- TO220 -3-1 V m A Enhancement mode Excellent Gate Charge x RDS(on) product (FOM) Superior thermal resistance P- TO262 -3-1 175°C operating temperature Avalanche rated dv/dt rated Type SPP100N03S2-03 SPB100N03S2-03 SPI100N03S2-03 Package P- TO220 -3-1 P- TO263 -3-2 P- TO262 -3-1 Ordering Code Q67042-S4058 Q67042-S4057 Q67042-S4116 Marking PN0303 PN0303 PN0303 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current1) TC=25°C Value 100 100 400 810 30 6 ±20 300 -55... +175 55/175/56 Unit A ID Pulsed drain current TC=25°C ID puls EAS EAR dv/dt VGS Ptot T j , Tstg Avalanche energy, single pulse ID=80A, V DD=25V, RGS=25 mJ Repetitive avalanche energy, limited by Tjmax 2) Reverse diode d v/dt IS=100A, VDS=24V, di/dt=200A/s, Tjmax=175°C kV/s V W °C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2003-05-09 SPI100N03S2-03 SPP100N03S2-03,SPB100N03S2-03 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) Symbol min. RthJC RthJA RthJA - Values typ. 0.3 max. 0.5 62 62 40 Unit K/W Electrical Characteristics, at Tj = 25 °C, unless o……
