器件名称:
SPI11N60S5
功能描述:
Cool MOS
文件大小:
335.41KB 共12页
简 介:
SPP11N60S5, SPB11N60S5 SPI11N60S5 Cool MOS Power Transistor Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductance P-TO220-3-1 VDS RDS(on) ID P-TO262 P-TO263-3-2 600 0.38 11 V A P-TO220-3-1 2 1 23 Type Package Ordering Code SPP11N60S5 SPB11N60S5 SPI11N60S5 Maximum Ratings Parameter P-TO220-3-1 P-TO263-3-2 P-TO262 Q67040-S4198 Q67040-S4199 Q67040-S4338 Marking 11N60S5 11N60S5 11N60S5 Symbol ID Value 11 7 Unit A Continuous drain current TC = 25 °C TC = 100 °C Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse I D = 5.5 A, VDD = 50 V I D puls EAS 22 340 0.6 11 ±20 ±30 mJ Avalanche energy, repetitive tAR limited by Tjmax1) EAR I D = 11 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax I AR Gate source voltage VGS Gate source voltage AC (f >1Hz) Power dissipation, T C = 25°C A V W °C VGS Ptot T j , T stg 125 -55... +150 Operating and storage temperature Rev. 2.1 Page 1 2004-03-30 SPP11N60S5, SPB11N60S5 SPI11N60S5 Maximum Ratings Parameter Drain Source voltage slope V DS = 480 V, ID = 11 A, Tj = 125 °C Symbol dv/dt Value 20 Unit V/ns Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 2) Soldering temperature, 1.6 mm (0.063 in.) from case for 10s Electrica……
