器件名称:
SPI47N10L
功能描述:
SIPMOS
文件大小:
114.75KB 共8页
简 介:
Preliminary data SPI47N10L SPP47N10L,SPB47N10L SIPMOS Power-Transistor Feature N-Channel Enhancement mode Logic Level 175°C operating temperature Avalanche rated dv/dt rated P-TO262-3-1 P-TO263-3-2 Product Summary VDS R DS(on) ID 100 26 47 P-TO220-3-1 V m A Type SPP47N10L SPB47N10L SPI47N10L Package P-TO220-3-1 P-TO263-3-2 P-TO262-3-1 Ordering Code Q67040-S4177 Q67040-S4176 Q67060-S7432 Marking 47N10L 47N10L 47N10L Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current TC=25°C TC=100°C Symbol ID Value 47 33 Unit A Pulsed drain current TC=25°C ID puls EAS EAR dv/dt VGS Ptot Tj , Tstg 188 400 17.5 6 ±20 175 -55... +175 55/175/56 kV/s V W °C mJ Avalanche energy, single pulse ID =47 A , VDD =25V, RGS =25 Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt IS =47A, VDS =0V, di/dt=200A/s Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2002-01-09 Preliminary data SPI47N10L SPP47N10L,SPB47N10L Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area F) Symbol min. RthJC RthJA RthJA - Values typ. max. 0.85 62 62 40 Unit K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage VGS =0V, ID =2mA Symbol min. V(B……
