器件名称:
SPI80N04S2-04
功能描述:
OptiMOS Power-Transistor
文件大小:
269.96KB 共8页
简 介:
SPI80N04S2-04 SPP80N04S2-04,SPB80N04S2-04 OptiMOS Power-Transistor Feature N-Channel Product Summary VDS RDS(on) max. SMD version ID P- TO262 -3-1 P- TO263 -3-2 40 3.4 80 P- TO220 -3-1 V m A Enhancement mode 175°C operating temperature Avalanche rated dv/dt rated Type SPP80N04S2-04 SPB80N04S2-04 SPI80N04S2-04 Package Ordering Code Marking 2N0404 2N0404 2N0404 Value 80 80 Unit A P- TO220 -3-1 Q67040-S4260 P- TO263 -3-2 Q67040-S4257 P- TO262 -3-1 Q67060-S6173 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Symbol Parameter Continuous drain current 1) TC=25°C TC=100°C ID Pulsed drain current TC=25°C I D puls EAS EAR dv/dt VGS Ptot T j , T stg 320 810 30 6 ±20 300 -55... +175 55/175/56 kV/s V W °C mJ Avalanche energy, single pulse ID=80A, VDD=25V, RGS=25 Repetitive avalanche energy, limited by Tjmax2) Reverse diode dv/dt IS=80A, VDS=32V, di/dt=200A/s, Tjmax =175°C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2004-05-24 SPI80N04S2-04 SPP80N04S2-04,SPB80N04S2-04 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) Symbol min. RthJC RthJA RthJA Values typ. 0.3 max. 0.5 62 62 40 Unit - K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown volt……
