器件名称:
SPI80N04S2-H4
功能描述:
OptiMOS Power-Transistor
文件大小:
415.66KB 共8页
简 介:
SPI80N04S2-H4 SPP80N04S2-H4,SPB80N04S2-H4 OptiMOS Power-Transistor Feature N-Channel Product Summary VDS R DS(on) ID P- TO262 -3-1 P- TO263 -3-2 40 4 80 P- TO220 -3-1 V m A Enhancement mode 175°C operating temperature Avalanche rated dv/dt rated Type SPP80N04S2-H4 SPB80N04S2-H4 SPI80N04S2-H4 Package P- TO220 -3-1 P- TO263 -3-2 P- TO262 -3-1 Ordering Code Q67060-S6014 Q67060-S6013 Q67060-S6014 Marking 2N04H4 2N04H4 2N04H4 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current 1) TC=25°C Value 80 80 320 660 25 6 ±20 300 -55... +175 55/175/56 Unit A ID Pulsed drain current TC=25°C ID puls EAS EAR dv/dt VGS Ptot T j , Tstg Avalanche energy, single pulse ID=80 A , V DD=25V, RGS=25 mJ Repetitive avalanche energy, limited by Tjmax 2) Reverse diode d v/dt IS=80A, VDS=32V, di/dt=200A/s, T jmax=175°C kV/s V W °C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2003-05-08 SPI80N04S2-H4 SPP80N04S2-H4,SPB80N04S2-H4 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) Symbol min. RthJC RthJA RthJA - Values typ. 0.35 max. 0.5 62 62 40 Unit K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage V GS=0V, ID=1mA S……
