器件名称:
SPI80N06S-08
功能描述:
SIPMOS
文件大小:
171.57KB 共8页
简 介:
SPB80N06S-08 SPI80N06S-08, SPP80N06S-08 SIPMOS Power-Transistor Features N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Avalanche test Repetive Avalanche up to Tjmax = 175 °C dv /dt rated Type SPB80N06S-08 SPI80N06S-08 SPP80N06S-08 Package P-TO263-3-2 P-TO262-3-1 P-TO220-3-1 Ordering Code P-TO263-3-2 Product Summary V DS R DS(on),max (SMD version) ID 55 7.7 80 V m A P-TO262-3-1 P-TO220-3-1 VDD=30 V, ID=80 A, VGS=10 V, RG=2.4 Marking Q67060-S6185 1N0608 T C=25 °C, V GS=10 V Q67060-S6187 1N0608 T C=100 °C, V GS=10 V Q67060-S6186 1N0608 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current1) Symbol Conditions ID T C=25 °C, V GS=10 V Value Unit A 80 T C=100 °C, V GS=10 V Pulsed drain current2) Avalanche energy, single pulse Avalanche energy, periodic2) Reverse diode dv /dt Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 Rev. 1.0 page 1 2) 80 320 700 30 6 ±20 kV/s V W °C mJ I D,pulse E AS E AR dv /dt V GS P tot T j, T stg T C=25 °C I D=80 A, R GS=25 , V DD=25 V T j≤175 °C I D=80 A, V DS=40 V, di /dt =200 A/s, T j,max=175 °C T C=25 °C 300 -55 ... +175 55/175/56 2004-11-30 SPB80N06S-08 SPI80N06S-08, SPP80N06S-08 Parameter Symbol Conditions min. Thermal characteristics2) Thermal resistance, junction - case Thermal resistance, junction ambient, leaded SMD version, device on PCB R thJC R thJA R ……
