器件名称:
SPI80N08S2-07R
功能描述:
OptiMOS Power-Transistor
文件大小:
325.34KB 共8页
简 介:
SPI80N08S2-07R OptiMOS Power-Transistor Feature N-Channel Product Summary VDS R DS(on) ID 75 7.3 80 P- TO262 -3-1 V m A Enhancement mode 175°C operating temperature Avalanche rated dv/dt rated Integrated gate resistance for easy parallel connection Type SPI80N08S2-07R Package P- TO262 -3-1 Ordering Code Q67060-S7417 Marking RN0807 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current 1) TC=25°C Symbol ID Value 80 80 Unit A Pulsed drain current TC=25°C ID puls EAS EAR dv/dt VGS Ptot T j , Tstg 320 750 30 6 ±20 300 -55... +175 55/175/56 kV/s V W °C mJ Avalanche energy, single pulse ID=80 A , V DD=25V, RGS=25 Repetitive avalanche energy, limited by Tjmax 2) Reverse diode d v/dt IS=80A, VDS=60V, di/dt=200A/s, T jmax=175°C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2003-05-09 SPI80N08S2-07R Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) Symbol min. RthJC RthJA RthJA - Values typ. 0.32 max. 0.5 62 62 40 Unit K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage V GS=0V, ID=1mA Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) 75 2.1 Values typ. 3 max. 4 Unit V Gate threshold voltage, VGS = V DS ……
