EEPW首页| 器件索引| 厂商列表| IC替换| 微缩略语| 电路图查询
器件查询:
400万器件资料库等您来搜!
首页>INFINEON> SPI80N10L

SPI80N10L

器件名称: SPI80N10L
功能描述: SIPMOS Power-Transistor
文件大小: 108.75KB 共8页
生产厂商: INFINEON
下  载: 在线浏览点击下载
简  介: Preliminary data SPI80N10L SPP80N10L,SPB80N10L SIPMOS Power-Transistor Feature Product Summary VDS RDS(on) ID P-TO262-3-1 P-TO263-3-2 N-Channel Enhancement mode Logic Level 175°C operating temperature Avalanche rated dv/dt rated 100 14 80 P-TO220-3-1 V A m Type SPP80N10L SPB80N10L SPI80N10L Package P-TO220-3-1 P-TO263-3-2 P-TO262-3-1 Ordering Code Q67042-S4173 Q67042-S4171 Q67042-S4172 Marking 80N10L 80N10L 80N10L Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current TC=25°C TC=100°C Symbol ID Value 80 58 Unit A Pulsed drain current TC=25°C ID puls EAS EAR dv/dt VGS Ptot Tj , Tstg 320 700 25 6 ±20 250 -55... +175 55/175/56 kV/s V W °C mJ Avalanche energy, single pulse ID =80 A , VDD =25V, RGS =25 Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt IS =80A, VDS =0V, di/dt=200A/s Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2002-08-14 Preliminary data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 1) SPI80N10L SPP80N10L,SPB80N10L Symbol min. RthJC RthJA RthJA - Values typ. max. 0.6 62.5 62 40 Unit K/W Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage VGS =0V, ID =2mA Symbol min. V……
相关电子器件
器件名 功能描述 生产厂商
SPI80N10L SIPMOS Power-Transistor INFINEON
《电子产品世界》杂志社 版权所有 北京东晓国际技术信息咨询有限公司
Copyright ©2002 ELECTRONIC ENGINEERING & PRODUCT WORLD. All rights reserved.
京ICP备12027778号-2