器件名称:
1N60A
功能描述:
0.5 Amps, 600 Volts N-CHANNEL MOSFET
文件大小:
139.89KB 共8页
简 介:
UNISONIC TECHNOLOGIES CO., LTD 1N60A 0.5 Amps, 600 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 1N60A is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. 1 TO-92 Power MOSFET FEATURES * RDS(ON) =11@VGS = 10V. * Ultra Low gate charge (typical 8.0nC) * Low reverse transfer capacitance (CRSS = 3.0 pF(max)) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness *Pb-free plating product number: 1N60AL SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Order Number Package Normal Lead Free Plating 1N60A-T92-B 1N60AL-T92-B TO-92 1N60A-T92-K 1N60AL-T92-K TO-92 1N60A-T92-R 1N60AL-T92-R TO-92 Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 1 2 3 G D S G D S G D S Packing Tape Box Bulk Tape Reel 1N60AL-T92-B (1)Packing Type (2)Package Type (3)Lead Plating (1) B: Tape Box, K: Bulk, R: Tape Reel (2) T92: TO-92 (3) L: Lead Free Plating , Blank: Pb/Sn www.unisonic.com.tw Copyright 2005 Unisonic Technologies Co., Ltd 1 of 8 QW-R502-091,B 1N60A ABSOLUTE MAXIMUM RATINGS(TC = 25℃, unless otherwise specified.) PARAMETER Drain-Source Voltage Gate-Source Voltage SYMBOL VDSS VGSS Power MOSFET RATINGS UNIT 600 V ±30 V TC = ……
