器件名称:
TS128MVSSFDC
功能描述:
128M SmartMedia
文件大小:
149.51KB 共3页
简 介:
TS128MVSSFDC Description The TS128MVSSFDC is a 128M(134,217,728)x8bit NAND Flash Memory with a spare 4096K(4,194,304)x8bit. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation programs the 528-byte page in typically 200us and an erase operation can be performed in typically 2ms on an 16K-byte block. Data in the page can be read out at 50ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command inputs. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verify and margining of data. Even the write-intensive systems can take advantage of the TS128MVSSFDC’s extended reliability of 1,000,000 program/erase cycle by providing either ECC(Error Correction Code) or real time mapping-out algorithm. The TS128MVSSFDC is an optimum solution for large nonvolatile storage applications such as solid state file storage, digital voice recorder, digital still camera and other portable applications requiring non-volatility. 128M SmartMedia Features Single 2.7V~3.6V supply Organization Memory Cell Array : (128M + 4096K)bitx8bit Data Register : (512 + 16)bit x8bit Automatic Program and Erase Page Program : (512 + 16)Byte Block Erase : (16K + 512)Byte 528-Byte Page Read Operation Random Access : 10us(Max.) Serial Page Access : 50ns(Min.) Fast Write Cycle Time Program time : 200us(typ.) Block Erase time : 2ms(……
