器件名称:
TS13003BCTA3
功能描述:
High Voltage NPN Transistor
文件大小:
51.65KB 共3页
简 介:
TS13003B High Voltage NPN Transistor Pin assignment: 1. Emitter 2. Collector 3. Base BVCEO = 400V BVCBO = 700V Ic = 1.5A VCE (SAT), = 0.8V @ Ic / Ib = 0.5A / 0.1A Features High voltage. High speed switching Ordering Information Part No. TS13003BCT B0 TS13003BCT A3 Packing Bulk Pack Ammo Pack Package TO-92 TO-92 Structure Silicon triple diffused type. NPN silicon transistor Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range Note: 1. Single pulse, Pw = 300uS, Duty <= 2% DC Pulse PD TJ TSTG Symbol VCBO VCEO VEBO IC Limit 700V 400V 9 1.5 3 0.6 +150 - 55 to +150 Unit V V V A W o o C C Electrical Characteristics (Ta = 25 oC unless otherwise noted) Parameter Static Collector-Base Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage DC Current Gain IC = 10mA, IB = 0 IC = 10mA, IE = 0 IE = 1mA, IC = 0 VCB = 700V, IE = 0 VEB = 9V, IC = 0 IC / IB = 1.5A / 0.5A IC / IB = 0.5A / 0.1A VCE = 2V, IC = 0.43A VCE = 2V, IC = 1.0A VCE = 5V, IC = 10uA Frequency Output Capacitance Turn On Time Storage Time Fall Time VCE = 10V, IC = 0.1A VCB = 10V, f = 0.1MHz VCC = 125V, IC = 1A, IB1 = 0.2A, IB2 = - 0.2A, RL = 125ohm fT Cob tON tSTG tf hFE BVCBO BVCEO BVEBO ICBO IEBO VCE(……
