器件名称:
TS13003CT
功能描述:
High Voltage NPN Transistor
文件大小:
62.31KB 共3页
简 介:
TS13003 High Voltage NPN Transistor TO-126 Pin assignment: 1. Emitter 2. Collector 3. Emitter BVCEO = 400V BVCBO = 700V Ic = 1.5A VCE (SAT), = 0.8V @ Ic / Ib = 0.5A / 0.1A Features High voltage. Ordering Information Part No. TS13003CT TS13003CK Packing Bulk Package TO-92 TO-126 High speed switching Structure Silicon triple diffused type. NPN silicon transistor Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range Note: 1. Single pulse, Pw = 5mS, Duty <= 10% DC Pulse TO-92 TO-126 TJ TSTG PD Symbol VCBO VCEO VEBO IC Limit 700V 400V 9 1.5 3 0.6 20 +150 - 55 to +150 Unit V V V A W o o C C Electrical Characteristics Ta = 25 oC unless otherwise noted Parameter Static Collector-Base Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage DC Current Gain Frequency Output Capacitance Turn On Time Storage Time Fall Time Conditions IC = 5mA, IB = 0 IC = 5mA, IE = 0 IE = 1mA, IC = 0 VCB = 700V, IE = 0 VEB = 9V, IC = 0 IC / IB = 1.5A / 0.5A IC / IB = 0.5A / 0.1A VCE = 2V, IC = 0.5A VCE = 10V, IC = 0.1A VCB = 10V, f = 0.1MHz VCC = 125V, IC = 1A, IB1 = 0.2A, IB2 = - 0.2A, RL = 125ohm Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(SAT)1 VCE(SAT)2 hFE fT Cob tON tSTG tf M……
