器件名称:
TS13005
功能描述:
High Voltage NPN Transistor
文件大小:
367.45KB 共6页
简 介:
TS13005 High Voltage NPN Transistor TO-220 ITO-220 Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO BVCBO IC VCE(SAT) 400V 700V 4A 1V @ IC / IB = 4A / 1A Features ● ● High Voltage High Speed Switching Block Diagram Structure ● ● Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. TS13005CZ C0 TS13005CI C0 Package TO-220 ITO-220 Packing 50pcs / Tube 50pcs / Tube Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Total Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range Note: Single Pulse. PW = 300uS, Duty ≤2% DC Pulse DC Pulse TO-220 ITO-220 Symbol VCBO VCEO VEBO IC IB Ptot TJ TSTG Limit 700V 400V 9 4 8 2 4 75 30 +150 - 55 to +150 Unit V V V A A W o o C C 1/6 Version: B07 TS13005 High Voltage NPN Transistor Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Static Collector-Base Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage IC =1mA, IB =0 IC =10mA, IE =0 IE =0.1mA, IC =0 VCE =400V, IB=0 VCB =700V, IE =0 VEB = 9V, IC =0 IC=1A, IB =0.2A IC=2A, IB =0.5A IC=4A, IB =1A Base-Emitter Saturation Voltage DC Current Gain Dynamic Frequency Output Capacitance VCE =10V, IC =0.5A VCB =10V, f =0.1MHz VCC =12……
