器件名称:
1N60P
功能描述:
GERMANIUM DIODES
文件大小:
310.86KB 共2页
简 介:
1N60, 1N60P Features Metal silicon junction, majority carrier conduction High current capability, Low forward voltage drop Extremely low reverse current lR Ultra speed switching characteristics Small temperature coefficient of forward characteristics Satisfactory Wave detection efficiency For use in RECORDER, TV, RADIO, TELEPHONE as detectors, super high speed switching circuits, small current rectifier GERMANIUM DIODES DO-35(GLASS) 0.075(1.9) MAX. DIA. 1.083(27.5) MIN. 0.154(3.9) MAX. Mechanical Data Case : DO-35 glass case Polarity : Color band denotes cathode end Weight : Approx. 0.13 gram 0.020(0.52) MAX. DIA. 1.083(27.5) MIN. Dimensions in inches and (millimeters) Absolute Ratings (Limiting Values) Symbols VRRM lF lFSM TSTG/TJ TL Parameters Zenerepetitive Peak Reverse Voltage Forward Continuous Crrent Peak Forward Surge Current(t=1S) Storage junction Temperature Range Maximum Lead Temperature for soldering 10S at 4mm from Case TA=25 Value 1N60 40 30 150 -65 to+125 230 1N60P 45 50 500 Units Volts mA mA Electrical characteristics Symbols Parameters Test Conditions IF=1mA 1N60 1N60P 1N60 1N60P 1N60 1N60P 1N60 1N60P Value Min Typ. 0.32 0.24 0.65 0.65 0.1 0.5 2.0 6.0 60 1 400 Max. 0.5 0.5 1.0 1.0 0.5 1.0 Units VF lR CJ Forward Voltage IF=30mA IF=200mA VR=15V VR=1V f=1MHz VR=10V f=1MHz Volts ìA pF % ns /W Reverse Current Junction Capacitance Detection Effcienc(See diagram 4) Revese Recovery time Junction Amblent Thermal Resistance trr Rè JA ……
