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1N6100

器件名称: 1N6100
功能描述: MONOLITHIC AIR ISOLATED DIODE ARRAY
文件大小: 19.8KB 共1页
生产厂商: MICROSEMI
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简  介: 1N6100 A Microsemi Company 580 Pleasant St. Watertown, MA 02472 Phone: 617-924-9280 Fax: 617-924-1235 DIODE ARRAY PRODUCT SPECIFICATION MONOLITHIC AIR ISOLATED DIODE ARRAY FEATURES: HERMETIC CERAMIC PACKAGE Bv > 75V at 5uA Ir < 100nA at 40V C < 4.0 pF 1 14 2 13 3 12 4 11 5 10 6 9 7 8 Absolute Maximum Ratings: Symbol VBR(R) *1 *2 IO *1 * 3 IFSM *1 PT1 *4 PT2 *4 Top Tstg Parameter Reverse Breakdown Voltage Continuous Forward Current Peak Surge Current (tp= 1/120 s) Power Dissipation per Junction @ 25°C Power Dissipation per Package @ 25°C Operating Junction Temperature Range Storage Temperature Range Limit 75 300 500 400 500 -65 to +150 -65 to +200 Unit .019 .010 .280 MAX .004 MIN .006 .003 Vdc mAdc mAdc mW mW °C °C .370 .250 .280 MAX .260 .240 NOTE 1: Each Diode NOTE 2: Pulsed: PW = 100ms max.; duty cycle < 20% NOTE 3: Derate at 2.4mA/°C above +25 °C NOTE 4: Derate at 4.0mW/°C above +25 °C .005 MIN .370 .250 Electrical Characteristics (Per Diode) @ 25°C unless otherwise specified Symbol Parameter Conditions .050 BSC .095 .030 PACKAGE OUTLINE Min Max Unit 1 0.1 25 4.0 15 10 5 Vdc uAdc nAdc pF ns ns mV Vf1 Forward Voltage If = 100mAdc *1 IR1 Reverse Current VR = 40 Vdc IR2 Reverse Current VR = 20 Vdc Ct Capacitance (pin to pin) VR = 0 Vdc; f = 1MHz tfr Forward Recovery Time If = 100mAdc trr Reverse Recovery Time If = IR = 10mAdc, irr = 1 mAdc, RL = 100 ohms VF5 Forward Voltage Match If = 10 mA NOTE 1: Pulsed: PW = 300us +/- 50us, duty cycle < 2%, 9……
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