器件名称:
ST5870
功能描述:
Photo Transistor
文件大小:
95.45KB 共4页
简 介:
Semiconductor ST5870 Photo Transistor Features Lensed for high sensitivity φ5mm(T-13/4) all plastic mold type High reliability and stable characteristics Visible light cut-off type With base terminal Outline Dimensions unit : mm PIN Connections 1. Base 2.Collector 3.Emitter KPT-0004-000 1 ST5870 Absolute maximum ratings Characteristic Collector-Emitter Voltage Emitter-Collector Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Operating Temperature Storage Temperature *1Soldering Temperature Symbol VCEO VECO VCBO VEBO IC PD Topr Tstg Tsol Ratings 30 6 30 6 20 75 -25 -30 260 85 100 for 5 seconds Unit V V V V mA mW *1. Keep the distance more than 2.0mm from PCB to the bottom of LED package Electrical Characteristics Characteristic Current Dark Current Symbol ICEO ICEL Test Condition VCEO=10V, Ee=0 VCE=5V, Ee IC=0.5 , Ee 1mW/ 1mW/ Min - Typ 0.05 5 0.18 10 10 Max 0.5 - Unit uA mA V us nm * Light Current Current-Emitter Saturation Voltage Switching Time Rise Time Fall Time 3 VCE(sat) tr tf VCC=2V, IC=1mA R1=100 - Spectral Sensitivity Peak Sensitivity Wavelength Half angle P 700 ~ 1000 880 ±35 - - nm deg θ1/2 30% *1. Tolerance = KPT-0004-000 2 Characteristic Diagrams Fig. 1 ICEL - Ee Fig. 2 ICEL - VCE ST5870 Light Current ICEL [mA] Irradiance Ee [ / ] Light Current ICEL [mA] Collector-Emitter Voltage VCE [V] Fig. 3 PD – Ta Fig.4 ICEO – Ta Power Dissipation PD [mW] Ambient Temperature ……
