器件名称:
STA124SF
功能描述:
PNP Silicon Transistor
文件大小:
125.08KB 共3页
简 介:
Semiconductor STA124SF PNP Silicon Transistor Features Suitable for low voltage large current drivers High DC current gain and large current capability Complementary pair with STD123SF Ordering Information Type NO. STA124SF Marking 124 Package Code SOT-23F Outline Dimensions 2.4±0.1 1.6±0.1 unit : mm 1 2.9±0.1 1.90 BSC 3 0.4±0.05 0.9±0.1 2 0.15±0.05 PIN Connections 1. Base 2. Emitter 3. Collector 0~0.1 KST-2124-001 1 STA124SF Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature * : Package mounted on 99.5% alumina 10×8×0.1mm (Ta=25°C) Symbol VCBO VCEO VEBO IC PC * Ratings -15 -12 -6.5 -1 350 150 -55~150 Unit V V V A mW °C °C Tj Tstg Electrical Characteristics Characteristic Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-Emitter saturation voltage Transistor frequency Collector output capacitance (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) fT Cob Test Condition IC=-50A, IE=0 IC=-1mA, IB=0 IE=-50A, IC=0 VCB=-15V, IE=0 VEB=-6V, IC=0 VCE=-1V, IC=-100mA IC=-500mA, IB=-50mA VCE=-5V, IC=-50mA VCB=-10V, IE=0, f=1MHz Min. Typ. Max. -15 -12 -6.5 200 -0.2 260 5 -0.1 -0.1 450 -0.4 - Unit V V V A A V MHz pF KST-2124-001 2 STA124SF Fig. 1 PC - Ta Fig. 2 IC - VBE Fig. 3 hFE-IC Fig.……
