器件名称:
STA335A
功能描述:
Power Transistor Array
文件大小:
22.46KB 共1页
简 介:
Power Transistor Array STA335A Absolute Maximum Ratings (Ta=25C) Symbol VCBO VCEO VEBO IC IB PT Tj Tstg Ratings 35± 5 35± 5 6 3 1 2.5 (Ta=25C) 12 (Tc=25C) 150 –55 to +150 Unit V V V A A W W C C Electrical Characteristics Symbol ICBO IEBO VCEO hFE VCE (sat) Es/b Test Conditions VCB = 30V VEB = 6V IC = 25mA VCE = 4V, IC = 0.5A IC = 1A, IB = 5mA L = 10mH, single pulse Ratings 10max 10max 35± 5 500min 0.5max 150min 11.3±0.2 2.3±0.2 9.0±0.2 (Ta=25C) Unit A A V V mJ External Dimensions STA3 (LF400A) 20.2±0.2 b a 4.7±0.5 0.5±0.15 Typical Switching Characteristics VCC (V) 12 RL () 12 IC (A) 1 VBB1 (V) 10 VBB2 (V) –5 IB1 (mA) 5 IB2 (mA) 5 ton (s) 1.3 tstg (s) 4.7 tf (s) 1.2 C1.5±0.5 1.0±0.25 72.54=17.78±0.25 (2.54) 0.5±0.15 1 2 C 3 B 4 E 5 E 6 B 7 C 8 a) Type No. b) Lot No. (Unit: mm) s IC — VCE Characteristics (typ.) A 10 m A s VCE (sat) — IB Temperature Characteristics 1 5mA 4mA (IC = 1A) s IC — VBE Temperature Characteristics (typ.) 4 VCE = 4V 3 15m 8m A A 6m 2 VCE (sat) (V) 3mA 2mA IB =1mA 3 IC (A) IC (A) 0.5 1 Ta = 125C 75C 25C –55C 2 1 Ta = –55C 25C 75C 125C 0 0 1 2 3 0 0.002 0.01 0.05 0.1 0.4 0 0 0.5 1.0 1.2±0.2 4.0±0.2 1.5 VCE (V) IB (A) VBE (V) s hFE — IC Temperature Characteristics (typ.) 5000 (VCE = 4V) s ton tstg t f — IC Characteristics (typ.) 20 s j-a — t Characteristics Single pulse tstg 20 VCE = 12V IB1 = – IB2 = 5mA ton tstg tf (S) 10 5 10 hFE 1000 500 Ta = 125C 75C 25C –55C (C/W) tf ton 0.1 ……
