器件名称:
STA415A
功能描述:
Power Transistor Array
文件大小:
25.17KB 共1页
简 介:
Power Transistor Array STA415A Absolute Maximum Ratings (Ta=25C) Symbol VCBO VCEO VEBO IC IB PT Tj Tstg * PW 1ms, Duty Ratings 35± 5 36± 5 6 2 (pulse 3*) 30 4 (Ta = 25C) 18 (Tc = 25C) 150 –55 to +150 25% Unit V V V A mA W W C C Electrical Characteristics Symbol ICBO IEBO VCEO hFE VCE (sat) VFEC RB RBE Es/b Test Conditions VCB = 30V VEB = 6V IC = 25mA VCE = 4V, IC = 0.7A IC = 0.5A, IB = 5mA IC = 1A, IB = 5mA IFEC = 2A Ratings 10max 2.7max 31 to 41 400min 0.2max 0.5max 2.5max 800± 120 2.0± 0.4 50min ±0.2 ±0.2 9.0 ±0.2 (Ta=25C) Unit A mA V V V V k mJ External Dimensions STA4 (LF412) 25.25 ±0.2 b a 11.3 3.5 ±0.5 2.3 1.0 ±0.25 0.5 ±0.15 (2.54) 0 ±0.3 0 ±0.3 9 2.54=22.86 ±0.05 ±0.15 Typical Switching Characteristics VCC (V) 12 RL () 12 IC (A) 1 VBB1 (V) 10 VBB2 (V) –5 IB1 (mA) 5 IB2 (mA) 0 ton (s) 1.0 tstg (s) 8.5 tf (s) 2.5 1 2 3 4 5 6 7 8 9 10 E B C B C B C B C E a) Type No. b) Lot No. (Unit: mm) s IC — VCE Characteristics (typ.) 30m A s VCE (sat) — IB Temperature Characteristics 0.5 8mA 5mA (IC = 0.5A) s VCE (sat) — IC Temperature Characteristics 3 IC /IB = 100 3 12 A m VCE (sat) (V) IC (A) 3mA 2mA VCE (sat) (V) 2 2 Ta = 125C 75C 25C –40C 0.25 1 IB = 1mA Ta = 125C 75C 25C –40C 1 0 0 0 1 2 3 4 5 6 1 10 100 400 0 0 0.5 1 0.5 1.2 4.0 L = 10mH, single pulse C1.5 ±0.5 ±0.2 ±0.2± 5 VCE (V) IB (mA) IC (A) s hFE — IC Temperature Characteristics 3000 (VCE = 4V) s tontstgtf — IC Characteristics (typ.) 50 s j-a — t Charact……
