器件名称:
STK1040F
功能描述:
Advanced Power MOSFET
文件大小:
474.59KB 共8页
简 介:
Semiconductor STK1040F Advanced Power MOSFET SWITCHING REGULATOR APPLICATIONS Features High Voltage: BVDSS=400V(Min.) Low Crss : Crss=12pF(Typ.) Low gate charge : Qg=28nc(Typ.) Low RDS(on) :RDS(on)=0.53(Max.) Ordering Information Type NO. STK1040F Marking STK1040 Package Code TO-220F-3L Outline Dimensions Φ3.05~3.35 9.80~10.20 unit : mm 2.60~3.00 15.40~15.80 12.20~12.60 9.10~9.30 12.40~13.00 1.07 Min. 0.90 Max. 0.60 Max. 2.54 Typ. 2.54 Typ. 1 2 3 0.60 Max. 3.46 Typ. 4.70 Max. 2.70 Max. PIN Connections 1. Gate 2. Drain 3. Source KSD-T0O009-000 1 STK1040F Absolute maximum ratings Characteristic Drain-source voltage Gate-source voltage Drain current (DC) Drain current (Pulsed) * (Tc=25°C) Symbol VDSS VGSS ID (Tc=25℃) (Tc=100℃) IDM PD ② ② ① ① IAS EAS IAR EAR TJ Tstg Rating 400 ±30 10 4.7 40 30 10 360 10 8.5 150 -55~150 Unit V V A A A W A mJ A mJ °C Drain power dissipation Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy Junction temperature Storage temperature range * Limited by maximum junction temperature Characteristic Thermal resistance Junction-case Junction-ambient Symbol Rth(J-C) Rth(J-a) Typ. - Max 4.16 62.5 Unit ℃/W KSD-T0O009-000 2 STK1040F Electrical Characteristics Characteristic Drain-source breakdown voltage Gate threshold voltage Drain-source cut-off current Gate leakage current Drain-source on-resistance Forward transfer conductance Input capacitance Outpu……
