器件名称:
STK1625F
功能描述:
Advanced Power MOSFET
文件大小:
465.91KB 共8页
简 介:
Semiconductor STK1625F Advanced Power MOSFET DC-DC CONVERTER APPLICATION HIGH VOLTAGE SWITCHING APPLICATIONS Features High Voltage: BVDSS=250V(Min.) Low Crss : Crss=18pF(Typ.) Low gate charge : Qg=29nC(Typ.) Low RDS(on) :RDS(on)=0.27(Max.) Type NO. STK1625F Marking STK1625 Package Code TO-220F-3L Ordering Information Outline Dimensions unit : mm 9.80~10.20 Φ3.05~3.35 2.60~3.00 15.40~15.80 12.20~12.60 9.10~9.30 1.07 Min. 0.90 Max. 0.60 Max. 2.54 Typ. 2.54 Typ. 1 2 3 0.60 Max. 3.46 Typ. 4.70 Max. 2.70 Max. PIN Connections 1. Gate 2. Drain 3. Source KSD-T0O010-000 1 STK1625F Absolute maximum ratings Characteristic Drain-source voltage Gate-source voltage Drain current (DC) Drain current (Pulsed) * (Tc=25°C) Symbol VDSS VGSS ID (Tc=25℃) (Tc=100℃) IDP PD ② ② ① ① IAS EAS IAR EAR TJ Tstg Rating 250 ±30 16 7.5 64 30 16 300 16 13.9 150 -55~150 Unit V V A A A W A mJ A mJ °C Drain Power dissipation Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy Junction temperature Storage temperature range * Limited by maximum junction temperature Characteristic Thermal resistance Junction-case Junction-ambient Symbol Rth(J-C) Rth(J-a) Typ. - Max 4.16 62.5 Unit ℃/W KSD-T0O010-000 2 STK1625F Electrical Characteristics Characteristic Drain-source breakdown voltage Gate-threshold voltage Drain-source leakage current Gate-source leakage Drain-Source on-resistance Forward transfer admittance Inpu……
