器件名称:
STPR2010CT
功能描述:
Ultra Fast Recovery Diodes
文件大小:
95.77KB 共2页
简 介:
STPR2010CT thru STPR2020CT Ultra Fast Recovery Diodes Dimensions TO-220AB A C(TAB) A C A C A Dim. A B C D E F G H J K M N Q R A=Anode, C=Cathode, TAB=Cathode STPR2010CT STPR2020CT VRRM V 100 200 VRMS V 70 140 VDC V 100 200 Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 Milimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 Symbol I(AV) IFSM Characteristics Maximum Average Forward Rectified Current @TC=95oC Maximum Ratings 20 125 1.1 1.0 1.25 1.20 5 100 100 35 1.5 -55 to +150 Unit A A Peak Forward Surge Current 8.3ms Single Half-Sine-Wave Superimposed On Rated Load (JEDEC METHOD) Maximum Forward Voltage At Pulse Width=300us 2% Duty Cycle Maximum DC Reverse Current At Rated DC Blocking Voltage IF=10A IF=10A IF=20A IF=20A @TJ=25oC @TJ=125oC @TJ=25oC @TJ=125oC @TJ=25oC @TJ=100oC VF V IR CJ TRR ROJC uA pF ns o Typical Junction Capacitance Per Element (Note 1) Maximum Reverse Recovery Time (Note 2) Typical Thermal Resistance (Note 3) C/W o TJ, TSTG Operating And Storage Temperature Range NOTES: 1. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC. 2. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A. 3. Thermal Resistance Junction To Case. C FEATURES * Glass passivated chip * Superfast switching t……
