器件名称:
STPR810DF
功能描述:
Ultra Fast Recovery Diodes
文件大小:
79.52KB 共2页
简 介:
STPR805DF thru STPR820DF Ultra Fast Recovery Diodes Dimensions TO-220AC A C(TAB) A C C Dim. A B C D E F G H J K L M N Q A=Anode, C=Cathode, TAB=Cathode VRRM V 50 100 150 200 VRMS V 35 70 105 140 VDC V 50 100 150 200 STPR805DF STPR810DF STPR815DF STPR820DF Inches Min. Max. 0.500 0.580 0.560 0.650 0.380 0.420 0.139 0.161 2.300 0.420 0.100 0.135 0.045 0.070 0.250 0.025 0.035 0.190 0.210 0.140 0.190 0.015 0.022 0.080 0.115 0.025 0.055 Milimeter Min. Max. 12.70 14.73 14.23 16.51 9.66 10.66 3.54 4.08 5.85 6.85 2.54 3.42 1.15 1.77 6.35 0.64 0.89 4.83 5.33 3.56 4.82 0.38 0.56 2.04 2.49 0.64 1.39 Symbol I(AV) IFSM VF IR CJ TRR ROJC Characteristics Maximum Average Forward Rectified Current @TC=100 oC Maximum Ratings 8.0 125 0.95 @TJ=25oC @TJ=100oC 5 500 110 35 2.5 -55 to +150 Unit A A V uA pF ns o Peak Forward Surge Current 8.3ms Single Half-Sine-Wave Superimposed On Rated Load (JEDEC METHOD) Maximum Forward Voltage At 8.0A DC Maximum DC Reverse Current At Rated DC Blocking Voltage Typical Junction Capacitance (Note 1) Maximum Reverse Recovery Time (Note 2) Typical Thermal Resistance (Note 3) C/W o TJ, TSTG Operating And Storage Temperature Range NOTES: 1. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC. 2. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A. 3. Thermal Resistance Junction To Case. C FEATURES * Glass passivated chip * Superfast switching time for high efficiency * Low forward voltage drop and high current capability * Low reverse leak……
