器件名称:
1N914A
功能描述:
SMALL SIGNAL SWITCHING DIODE
文件大小:
121.41KB 共3页
简 介:
BL FEATURES GALAXY ELECTRICAL 1N914,1N914A,1N914B REVERSE VOLTAGE: 75 V CURRENT： 75 mA DO - 35 SMALL SIGNAL SWITCHING DIODE ◇ Glass sealed envelope. (MSD) ◇ VRM=100V guaranteed ◇ High reliability MECHANICAL DATA ◇ Case: DO-35, glass case ◇ Polarity: Color band denotes cathode ◇ Weight: 0.004 ounces, 0.13 grams MAXIMUM RATINGS (Ratings at 25℃ambient temperature unless otherwise specified.） 1N914,1N914A,1N914B Maximum DC reverse voltage Maximum recurrent peak reverse voltage Average forward rectified current half wave rectification with resistive load Forward surge current t<1ms t=1ms t=1s Power dissipation (note) Junction temperature Storage temperature range UNITS V V mA A mW ℃ ℃ VR VRM IO IFSM Ptot Tj TSTG 75 100 75 4.0 1.0 0.5 250 175 - 65 --- + 175 Note:Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature. ELECTRICAL CHARACTERISTICS (Ratings at 25℃ambient temperature unless otherwise specified.） Min Forw ard voltage @1N914,1N914A,I F=10mA 1N914B,I F=5mA 1N914B,I F=100mA Leakage current @V R=20V @V R=75V @V R=20V,Tj=150℃ Capacitance @ V R=0V,f=1MHZ Typ - Max 1.0 0.72 1.0 25 5 50 4 8 2.5 500 UNITS V nA A A pF ns V ℃/W www.galaxycn.com VF IR Ctot trr Vfr RθjA 0.62 - Reverse recovery time @I F=10mA,IR=10mA, RL=100,measured at I R=1mA Voltage rise w hen sw itching on tested w ith 50mA pulses t r=20ns Thermal resistance junction to ambient (note ) Note:Valid provided that leads at a distance of 8 mm from case are kept at am……
