器件名称:
V12P10-E3/86A
功能描述:
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
文件大小:
110.92KB 共5页
简 介:
New Product V12P10 Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A TMBS K eSMP TM Series FEATURES Very low profile - typical height of 1.1 mm Ideal for automated placement Trench MOS Schottky technology Low forward voltage drop, low power losses 1 2 TO-277A (SMPC) K Cathode Anode 1 Anode 2 High efficiency operation Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Halogen-free MECHANICAL DATA Case: TO-277A (SMPC) Molding compound meets UL 94V-0 flammability rating. Base P/N-E3 - RoHS compliant, commercial grade Base P/NHE3 - RoHS compliant, high reliability/ automotive grade (AEC-Q101 qualified) Base P/N-M3 - halogen-free and RoHS compliant, commercial grade Base P/NHM3 - halogen-free and RoHS compliant, high reliability/automotive grade (AEC-Q101 qualified) Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 and M3 suffix meets JESD 201 class 1A whisker test, HE3 and HM3 suffix meets JESD 201 class 2 whisker test PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM EAS VF at IF = 12 A TJ max. 12 A 100 V 200 A 100 mJ 0.58 V 150 °C TYPICAL APPLICATIONS For use in low voltage high frequency inverters, freewheeling, dc-to-dc converters and polarity protection applications. MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Device marking code Maximum repetitive peak reverse volt……
